mss40 / mss50 series 29/10/2012 comset semiconductors 1 | 4 semiconductors back to back scr module SOT-227 main features ? i t(rms) : 55 and 70 a ? v drm /v rrm : 800 and 1200 v ? i gt : 50 ma mss 40 - 800 scr voltage : module 800 : 800v series 1200 : 1200v current : 40 : 55a 50 : 70a the mss40 / mss50 series is based on two back-to-back scr configurations, providing high noise immunity. they are suitable for high power applications. the compactness of the SOT-227 package allows high power density and optimized power bus connections. compliance to rohs. 1 : thyristor 2 anode (a2) 2 : thyristor 2 gate (g2) 3 : thyristor 1 anode (a1) 4 : thyristor 1 gate (g1)
mss40 / mss50 series 29/10/2012 comset semiconductors 2 | 4 semiconductors absolute maximum ratings symbol ratings value unit mss40 mss50 i t(rms) rms on-state current t c = 80 c 55 - a t c = 85 c - 70 i tsm non repetitive surge peak on-state current t p = 16.7ms t j = 25 c 420 630 a t p = 20ms 400 600 i 2 t i 2 t value for fusing t p = 10ms t j = 25 c 800 1800 a 2 s dl/dt critical rate of rise of on- state current i g = 2xi gt , tr 100ns f = 120hz t j = 125 c 50 a/s i gm peak gate current t p = 20s t j = 125 c 4 a p g ( av ) average gate power dissipation t j = 125 c 1 w t j operating junction temperature range -40 to +125 c t st g storage junction temperature range -40 to +150 v rgm maximum peak reverse gate voltage 5 v thermal characteristics symbol ratings value unit r th(j-c) junction to case (ac) mss40 0.6 c/w mss50 0.45
mss40 / mss50 series 29/10/2012 comset semiconductors 3 | 4 semiconductors electrical characteristics tc=25c unless otherwise noted symbol test conditions min typ max unit i drm v drm = v drm rated t j = 25 c mss40 - - 20 a mss50 t j = 125 c mss40 - - 10 ma mss50 i rrm v rrm = v rrm rated t j = 25 c mss40 - - 20 a mss50 t j = 125 c mss40 - - 10 ma mss50 i gt v d = 12 v, r l = 33 ? mss40 5 - 50 ma mss50 v gt v d = 12 v, r l = 33 ? mss40 - - 1.3 v mss50 v gd v d = v drm , r l = 3.3 k ? t j = 125 c mss40 0.2 - - v mss50 i h i t = 500 ma gate open mss40 - - 80 ma mss50 v tm i tm = 80a t p = 380 s t j = 25 c mss40 - - 1.7 v i tm = 100a t p = 380 s mss50 - - 1.7 i l i g = 1.2xi gt mss40 - - 120 ma mss50 dv/dt v d = 67% v drm gate open t j = 125 c mss40 1000 - - v/s mss50 v t0 threshold voltage t j = 125 c mss40 - - 0.85 v mss50 r d dynamic resistance t j = 125 c mss40 - - 11 m ? mss50 - - 7
mss40 / mss50 series 29/10/2012 comset semiconductors 4 | 4 semiconductors mechanical data case SOT-227 revised september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com
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